کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728354 892836 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of annealing temperature on the copper nanoparticles deposited on the silicon nanoporous pillar array
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Effect of annealing temperature on the copper nanoparticles deposited on the silicon nanoporous pillar array
چکیده انگلیسی

Copper/silicon nanocomposite system (Cu/Si-NPA) is prepared by immersion plating Cu nanoparticles on silicon nanoporous pillar array (Si-NPA). The Cu/Si-NPA samples are heated under nitrogen for 2 h at elevated temperatures of 400 °C, 600 °C, and 800 °C. The morphological changes of Cu nanoparticles before and after heat treatments are characterized by SEM. The crystallinity and the average size of Cu nanoparticles before and after heat treatments are studied by XRD. The results show that two possible mechanisms, Ostwald ripening, and particle migration and coalescence, are believed to be responsible for the ripening of annealed Cu nanoparticles at different annealing temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 1, February 2013, Pages 10–14
نویسندگان
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