Connecting plugs of high-powered GaN-based lighting-emitting diodes prepared by electroplating

We investigate the fabrication and the characteristics of a gallium nitride-based light-emitting diode (GaN-based LED) with a connecting plug. The connecting plug was prepared by electroplating, connecting the front and back side of the GaN-based LED via a through hole formed by a laser driller to improve the heat dissipation and the yield loss that was caused by the disconnection between the front and the back sides of the GaN-based LEDs because of the edge coverage effect. The junction temperature of the GaN-based LEDs with the connecting plug increased from 19 to 54 °C when the injection current was increased from 100 to 500 mA.