کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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728372 | 892836 | 2013 | 5 صفحه PDF | دانلود رایگان |
We have investigated the Si0.8Ge0.2/Si multi-layer grown directly onto the Si (001) substrates using reduced pressure chemical vapor deposition. The thicknesses of the Si0.8Ge0.2/Si multi-layer were determined using transmission electron microscopy. From the results of energy-dispersive X-ray spectroscopy and X-ray diffraction analyses on the Si0.8Ge0.2/Si multi-layer, Ge composition in the Si1−xGex layers was determined as ∼20% and the value of residual strain ε of the Si0.8Ge0.2 layer is calculated to be 0.012. Three peaks are observed in Raman spectrum, which are located at approximately 514, 404, and 303 cm−1, corresponding to the vibration of Si–Si, Si–Ge, and Ge–Ge phonons, respectively. The photoluminescence spectrum originates from the radiative recombinations both from the Si substrate and the Si0.8Ge0.2/Si multi-layer. For the Si0.8Ge0.2/Si multi-layer, the transition peaks related to the quantum well region observed in the photocurrent spectrum were preliminarily assigned to e–hh and e–lh fundamental excitonic transitions.
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 1, February 2013, Pages 126–130