کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728428 | 1461419 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High efficiency n-ZnO/p-Si core–shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High efficiency n-ZnO/p-Si core–shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface High efficiency n-ZnO/p-Si core–shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface](/preview/png/728428.png)
چکیده انگلیسی
A highly efficient n-ZnO/p-Si core–shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 27, November 2014, Pages 297–302
Journal: Materials Science in Semiconductor Processing - Volume 27, November 2014, Pages 297–302
نویسندگان
Kyung Yong Ko, Hyemin Kang, Jungkil Kim, Woo Lee, Hee Sung Lee, Seongil Im, Ji Yeon Kang, Jae-Min Myoung, Han-Gil Kim, Soo-Hyun Kim, Hyungjun Kim,