کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728506 | 892840 | 2012 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys](/preview/png/728506.png)
چکیده انگلیسی
The study of the electronic band structure of AlxGa1−-xAs alloy is calculated within the local empirical pseudo-potential method including the effective disorder potential into the virtual crystal approximation. Monotonic decreasing and increasing functions are obtained for the temperature and pressure dependent form factors, respectively. Some physical quantities as band gaps, bowing parameters, refractive indices, and dielectric constants of the considered alloy with different Al concentration are calculated under the effects of temperature and hydrostatic pressure. The obtained results have been found in good agreement with the experimental and published data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 5, October 2012, Pages 505–515
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 5, October 2012, Pages 505–515
نویسندگان
Abdel Razik Degheidy, Elkenany Brens Elkenany,