Design considerations of source and drain regions in nano double gate MOSFETs

In this paper, we present a detailed simulation study of the impact of varying source/drain parameters on the performance of nanoscale double gate metal oxide semiconductor field effect transistors. Quantum simulations are performed based on self-consistent solutions of 2D Poisson equation and Schrödinger equation with open boundary conditions, within the non-equilibrium Green's function formalism. The effects of varying source and drain parameters are studied by focusing on the on-off current ratio, subthreshold swing, drain induced barrier lowering, transconductance, drain conductance, voltage gain and on resistance. Simulation results illustrate that we can improve the device performance by proper selection of the source and drain parameters.