High-resolution transmission electron microscopy study on bipolar resistive switching behavior in TiO2 thin films

We fabricated TiO2 thin films the by sol–gel process. Successful I–V curves can be obtained in the Cu/TiO2/ATO structure device in which TiO2 thin film was calcined at 300 °C. The bipolar resistive switching behavior was observed and the ratio of Roff/Ron can be increased to 104. The switching voltage changes from 4.8 to 3.5 V when the current compliance drops from 10 to 0.1 mA. We also investigated the microstructure by HRTEM technology.