کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728589 892844 2012 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures
چکیده انگلیسی

The frequency (f) and bias voltage (V) dependence of electrical and dielectric properties of Au/SiO2/n-GaAs structures have been investigated in the frequency range of 10 kHz–3 MHz at room temperature by considering the presence of series resistance (Rs). The values of Rs, dielectric constant (ε′), dielectric loss (ε″) and dielectric loss tangent (tan δ) of these structures were obtained from capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements and these parameters were found to be strong functions of frequency and bias voltage. In the forward bias region, C–V plots show a negative capacitance (NC) behavior, hence ε′–V plots for each frequency value take negative values as well. Such negative values of C correspond to the maximum of the conductance (G/ω). The crosssection of the C–V plots appears as an abnormality when compared to the conventional behavior of ideal Schottky barrier diode (SBD), metal–insulator–semiconductor (MIS) and metal–oxide–semiconductor (MOS) structures. Such behavior of C and ε′ has been explained with the minority-carrier injection and relaxation theory. Experimental results show that the dielectric properties of these structures are quite sensitive to frequency and applied bias voltage especially at low frequencies because of continuous density distribution of interface states and their relaxation time.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 1, February 2012, Pages 41–46
نویسندگان
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