Effect of deposition conditions on properties of nitrogen rich-InN nanostructures grown on anisotropic Si (110)

Nanocrystalline InN were fabricated on anisotropic silicon [Si(110)] substrates by reactive radio frequency sputtering. The effects of deposition conditions on the InN film characteristics were comprehensively studied. The films were prepared using different argon and nitrogen plasma ratios under 8×10−3 mbar at different temperatures and RF powers. X-ray diffraction measurements confirmed that all deposited films are wurtzite nanocrystalline InN films with (101) preferred growth orientation. All of the samples obtained under different deposition conditions were slightly N rich. For optimized deposition conditions, InN film on Si(110) substrate shows smooth surface with root-mean-square roughness around 2 nm. The optical properties of InN layers were examined by micro-Raman and FTIR spectroscopy at room temperature. The A1(TO) and E1(TO) modes observed were a consequence of the wurtzite nanocrystalline nature of RF-sputtered films.