کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728727 1461420 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Kinetic Monte Carlo simulation of low-pressure chemical vapor deposition of silicon nitride: Impact of gas flow rate and temperature on silicon cluster size and density
ترجمه فارسی عنوان
شبیهسازی سینتیک مونت کارلو از رسوب بخار شیمیایی کم فشار نیترید سیلیکون: تاثیر جریان و دمای گاز بر روی اندازه و تراکم خوشه سیلیکون
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی

In the present study, the deposition process of SiNx thin films obtained by a low-pressure chemical vapor deposition technique with a mixture of disilane (Si2H6) and ammonia (NH3) was simulated by using the kinetic Monte Carlo method. A new pattern describing the distribution of ammonia molecules in the simulation matrix was proposed. The influences of the NH3/Si2H6 gas flow ratio and the deposition temperature on the obtained films structure in terms of silicon cluster size and density were analyzed. The simulation results indicate that an increase in the gas flow ratio leads to the deposition of amorphous silicon clusters characterized by small sizes. Nevertheless, an increase in the temperature values of the process provokes an enhancement in the silicon cluster size along with a decrease in their density.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 26, October 2014, Pages 555–560
نویسندگان
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