TiO2-based structures for nanoscale memory applications

TiO2-based metal–insulator–metal (MIM) structures have attracted considerable attention due to their possible application in memory devices. In our review we summarize advances in preparation of TiO2 thin films focusing on atomic layer deposition, ALD. ALD is considered the most promising technology for memory application. We describe development of TiO2-based capacitors for dynamic random access memory, DRAM. It is concluded, that the TiO2-based capacitors may fulfill requirements for the 20 nm DRAM generation and beyond. Finally, current status in resistive switching in TiO2-based MIM structures is presented. Recent advances in the understanding of the resistive switching phenomena indicate their potential for use in memory devices.