کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728787 892852 2013 15 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Recent development of gallium oxide thin film on GaN
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Recent development of gallium oxide thin film on GaN
چکیده انگلیسی

Gallium nitride (GaN) has attracted much attention due to its outstanding characteristics. It may replace conventional semiconductor materials, such as silicon, that are approaching their physical limitation in terms of power handling, maximum frequency and operation temperature. The native oxide of GaN [gallium oxide (Ga2O3)] has become a potential candidate of gate oxide in GaN-based high power metal-oxide-semiconductor devices. In this paper, properties of Ga2O3 as gate oxide are reviewed. Recent development of various techniques being used to grow or deposit Ga2O3 on GaN are also discussed and compared, with the main focus on thermal oxidation technique and oxide formation mechanism.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 16, Issue 5, October 2013, Pages 1217–1231
نویسندگان
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