Manganese oxide thin-films for current-signal sensing and thermal insulation

Manganese oxide thin-films for current-signal sensing and thermal insulation were synthesized by high-vacuum evaporation and thermal oxidation processes at low-temperature conditions. Structure-formation of the films with orthorhombic-partial structure of MnO2/Mn2O3 was investigated by X-ray diffraction. Raman studies have demonstrated that thermal properties can be influenced by the symmetry of the Mn–O bonds and it associated with the dynamic Jahn–Teller distortion. Dynamic behavior of samples as a function of the frequency response to verify their performance as signal sensors was evaluated by resistive–inductive circuit (RL circuit). To demonstrate the thermal capability of samples from current–voltage (I–V) characteristics, a Schottky emission model was used.