Analysis of the properties of germanium/zinc silicate film growth through a simple thermal evaporation technique for hydrogen gas sensing and deep UV photodetector application

Germanium/zinc silicate (Ge/Zn2SiO4) thin films were produced in a high-temperature horizontal tube furnace. Structural and optical properties of thin films were investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction. Room temperature Raman spectra were also obtained. Nickel (Ni) metal–semiconductor–metal (MSM) contacts were deposited on the Ge/Zn2SiO4 thin film by evaporating Ni using an appropriate MSM mask. Corresponding current–voltage characteristics of the Schottky diodes were recorded before and after (2%) hydrogen (H2) gas exposure with different flow rates. The respectable response and sensitivity of the MSM to H2 gas heighten the potential interest in future gas sensor devices. The strong photoelectric properties of the MSM in the deep ultraviolet demonstrate that the film contributes to photosensitivity. Therefore, Ge/Zn2SiO4 films are potential photodetectors in short wavelength applications.