کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728843 892855 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of KOH treatment on the Schottky barrier inhomogeneity in Ni/n-GaN
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Effect of KOH treatment on the Schottky barrier inhomogeneity in Ni/n-GaN
چکیده انگلیسی

The effect of KOH treatment on the Schottky barrier inhomogeneity in Ni/n-GaN Schottky diodes was investigated. It was observed that both the barrier heights and ideality factors varied from diode to diode with a linear relationship between barrier height and ideality factor, indicating the presence of a lateral inhomogeneity in the Schottky barrier. Simple extrapolation of the straight line obtained from the linear fitting to the barrier height versus ideality factor plot to the image-force controlled ideality factor produced the lateral homogeneous barrier heights, which were higher than those from current–voltage measurements. Furthermore, Gaussian fitting to the distribution of barrier heights exhibited the increased barrier height with the smaller standard deviation after KOH treatment, implying the improved barrier homogeneity. A possible explanation for this behavior can be an improvement of the Ni/n-GaN interface intrinsic properties, e.g., through a reduction of the surface states acting as low barrier region.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 13, Issue 1, February 2010, Pages 51–55
نویسندگان
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