کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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728846 | 892857 | 2010 | 7 صفحه PDF | دانلود رایگان |

Nanosized Fe3+-doped SnO2 thin film was prepared by the sol–gel dip coating (SGDC) technique on quartz class substrate and sintered at 800 °C. The microstructures, surface morphology and optical properties of these films were then characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption measurements, respectively. Electrical properties were analyzed, and resistivity, type and number of carrier concentration, Hall mobility measured as a function of Fe3+ doping and temperature. The XRD spectrum shows the decrease in peak heights as a result of Fe3+-doping while SEM images reveal reduction in crystallite size with increase in Fe3+ content. The optical studies showed a direct band gap reducing with increase in Fe3+-doping from 3.87 to 3.38 eV. From the electrical measurements, it was found that the resistivity initially increased with Fe3+-doping before reducing at higher doping level. Hall mobility measurements showed n-type conductivity at lower Fe3+-doping levels and p-type at higher levels. The increase in conductivity with temperature ascertained the semiconducting behavior of these films.
Journal: Materials Science in Semiconductor Processing - Volume 13, Issue 3, September 2010, Pages 125–131