Near white light emission from GaN based light emitting diode with GaN/AlGaN distributed Bragg reflector

A near white GaN-based multiple quantum well (MQW) light emitting diode (LED) was grown by metal–organic chemical vapor deposition on top of a 20-period GaN/AlzGa1−zN distributed Bragg reflector (DBR). Photoluminescence, electroluminescence and high resolution X-ray diffraction were performed to analyze the sample characteristics. The results show that the introduction of the DBR increases the ratio of the green to blue light intensities. Near white light emission with commission international de l’Eclairage color coordinates x=0.18, y=0.28 was achieved at injection current 20 mA for the sample with DBR.