کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728857 892857 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermal desorption of Ge native oxides and loss of Ge from the surface
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Thermal desorption of Ge native oxides and loss of Ge from the surface
چکیده انگلیسی

The authors have identified oxidation and desorption processes of Ge native oxide by chemical bonding states measured by X-ray photoemission spectroscopy. Ge oxidation occurs at the temperatures of 450–500 °C in an oxidizing ambient. Ge desorption in nitrogen ambient is observed at the temperatures of 500–550 °C, which is higher than the oxidation temperature by 50 °C. Combined oxidation and desorption processes proceed subsequently and cause a loss of Ge from the surface when Ge is annealed in oxidizing ambient at a temperature higher than desorption temperature. The surface loss is avoided when Ge is annealed with SiO2 cap layer in an identical annealing condition.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 13, Issue 3, September 2010, Pages 185–188
نویسندگان
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