کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728858 892857 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A simple CMOS process compatible high performance parallel-stacked spiral inductor for advanced RF analog circuit applications
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A simple CMOS process compatible high performance parallel-stacked spiral inductor for advanced RF analog circuit applications
چکیده انگلیسی

A high Q on-chip inductor with some unique structures has been fabricated with 0.13 μm CMOS compatible process for the first time. The unique structures including parallel stacked, line via between inter-metal layers, and use the top signal pad as the under path of the inductor instead of conventional bottom signal pad. These structures offer advantages of reducing resistance, high Q value, simple preparing process and small chip area. Experimental results show that the measured peak Q and peak-Q frequency can attain 7.06 and 1.8 GHz, respectively for the structure with four metal layers in parallel, 15 μm in metal width, 5.5 turns in wire number,and an area of 204×240 μm2. The results have a better potential for advanced mobile communication applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 13, Issue 3, September 2010, Pages 189–192
نویسندگان
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