Challenges and opportunities in advanced Ge pMOSFETs

This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-performance CMOS devices. Key in the development is the integration of a Ge channel on a silicon platform and the passivation of the interface between the high-k gate stack and the substrate. The different routes will be critically discussed in view of optimizing the on-current related to a high low-field hole mobility and reducing the off-current and the short-channel effects. Finally, an outlook on future technology developments will be formulated.