Direct observation of local atomic structure in arsenic implanted silicon

We have investigated the implantation fluence dependence of the local atomic structure around arsenic (As) dopant atoms in low-energy (10 keV) implanted crystalline silicon by extended X-ray absorption fine structure (EXAFS) spectroscopy performed using a high-brilliance synchrotron radiation beam from an in-vacuum undulator in a third-generation light source. To obtain complementary information on the structural properties, high-resolution transmission electron microscopy (HR-XTEM) and nanobeam electron diffraction (NBED) measurements were also performed. We present the first observation of the initial stages of lattice disorder in As-implanted Si.