کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728914 1461432 2009 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Correlation of DC and AC electrical properties of Al/p-Si structure by I-V-T and C(G/ω)-V-T measurements
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Correlation of DC and AC electrical properties of Al/p-Si structure by I-V-T and C(G/ω)-V-T measurements
چکیده انگلیسی
Current-voltage-temperature and admittance-gate bias-temperature measurements were performed on Al/p-Si structure to investigate transport and storage properties. In forward direction of former measurement, three distinct voltage regions designated different transport mechanisms: recombination, tunneling and space charge limited current. In the reverse direction, current seemed to be roughly proportional to the square root of bias at low region. Activation energy (EA) as 0.56 eV together with the ideality factor around 1.5 confirmed that generation-recombination current was the actual current transport mechanism. Increase in applied bias resulted in the appearance of other mechanisms: tunneling and space charge limited current, deduced by temperature-independent current flow and power of bias (greater than 2) in both forward and reverse directions, respectively. On the other hand, the distinctive bias voltage regions in current-voltage-temperature measurement corresponded to inverting, depleting and accumulating gate bias regimes in typical M(I)S structure for admittance analysis. Conductance branch of admittance reflected a similar behavior with that of the measurement under both temperature and frequency as parameter. On the other hand, with the aid of capacitance branch of admittance in the light of mentioned regimes and their corresponding energy band diagrams, correlation with ac and dc electrical properties was carried out.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 12, Issues 4–5, August–October 2009, Pages 133-141
نویسندگان
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