A study of two-step growth and properties of In0.82Ga0.18As on InP

In0.82Ga0.18As was grown by LP-MOCVD on InP substrates with the two-step growth technique. It was analyzed that epilayer's growth temperature affected on the crystalline quality, surface morphology, carrier concentration, and mobility of the In0.82Ga0.18As, which was characterized by X-ray diffraction, scanning electron microscopy, and Hall measurements. The evaluation of stress in In0.82Ga0.18As was made from frequency shift of the GaAs-like LO phonon of the Raman spectrum.