کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728919 1461432 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature
چکیده انگلیسی

Room-temperature bonding between low-pressure chemical vapor deposition (LPCVD) oxide and silicon has been achieved by using N+ plasma activation and chemical mechanical polishing (CMP). The bonding energy reaches the value of bulk silicon fracture energy (about 2.5 J/m2) after annealing at 400 °C for an hour, which is higher than the bonding energy between thermal oxide and silicon using the same process. The density difference is believed to be the main contributor to the enhanced bonding energy. Silicon-on-insulator (SOI) substrate is fabricated using Smart-Cut technology and then chemical mechanically polished to obtain a reasonably smooth surface for device manufacture. This low-temperature bonding process can be used in many applications, such as microelectromechanical systems (MEMS) and three-dimensional integration.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 12, Issues 4–5, August–October 2009, Pages 161–167
نویسندگان
, , , , , ,