کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728922 | 1461432 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Iron precipitation in as-received Czochralski silicon during low temperature annealing
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Iron precipitation in as-received Czochralski silicon during low temperature annealing Iron precipitation in as-received Czochralski silicon during low temperature annealing](/preview/png/728922.png)
چکیده انگلیسی
The iron precipitation in as-received Czochralski (CZ) silicon during low temperature from 300 to 700 °C was investigated. It was found that the iron precipitation rate was increased in turn from 300 to 700 °C. It was also found that the iron could form small precipitates even at low concentration. Moreover, iron precipitation was revealed as the diffusion-limited process, which could be described properly by Ham's law. This performance of iron precipitation in as-received CZ silicon was considered to be significantly influenced by the grown-in oxygen precipitates because of the fact that the grown-in oxygen precipitates could act as the heterogeneous nuclei for interstitial iron.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 12, Issues 4–5, August–October 2009, Pages 185–188
Journal: Materials Science in Semiconductor Processing - Volume 12, Issues 4–5, August–October 2009, Pages 185–188
نویسندگان
Yuheng Zeng, Deren Yang, Zhenqiang Xi, Weiyan Wang, Duanlin Que,