Characteristics of pulse plated copper indium telluride films

Copper Indium Telluride films were deposited for the first time by the pulse electrodeposition technique at different duty cycles in the range of 6–50% at room temperature and at a constant potential of −0.66 V(SCE). The films exhibited single phase copper indium telluride. The grain size increased with increase of duty cycle. Optical band gap of the films varied in the range of 0.98–1.02 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 15 nm to 30 nm and 1.0 nm to 1.5 nm, respectively with increase of duty cycle. Capacitance voltage measurements indicated the films to exhibit n-type behavior. The flat band potential was −0.76 V(SCE) and carrier density was in the range of 1016 cm−3.