کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729042 1461397 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of capping during the formation of Cu2ZnSn(S,Se)4 thin films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Impact of capping during the formation of Cu2ZnSn(S,Se)4 thin films
چکیده انگلیسی

Major challenge for the fabrication of kesterite absorber thin films such as CZTSSe (Cu2ZnSn(S,Se)4) is the volatility of chalcogens. Material loss and poor morphology are two key issues during high temperature annealing, carried out for the formation of CZTSSe thin film absorber layers. The purpose of the present study is to investigate the influence of capping during the crystallization of precursor to CZTSSe films via annealing. In this work, initial precursor was synthesized from elemental constituents by ball milling. CZTSSe films were deposited by doctor's blade process. Annealing was carried out in two different atmosphere viz. vacuum and inert gas. Both sets of samples were annealed with and without capping. We found significant changes for different annealing atmospheres. Capping has a positive influence on the film properties, revealed by structural, morphological and compositional analysis. Capping reduced material loss of volatile constituents and resulted compact crystalline films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 50, 1 August 2016, Pages 55–60
نویسندگان
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