کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729050 | 1461439 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence](/preview/png/729050.png)
چکیده انگلیسی
Oval defects, which are commonly found in epitaxial (In)Ga(Al)As heterostructures grown by molecular beam epitaxy (MBE) technique, are studied in this paper. The investigations of the morphology as well as the optical properties of defects were performed by scanning electron microscopy (SEM), cathodoluminescence (CL) and spatially resolved photoluminescence (SRPL). The conclusions are drawn as to the sources of defects, conditions of their appearance and their possible internal structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1â3, FebruaryâJune 2006, Pages 25-30
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1â3, FebruaryâJune 2006, Pages 25-30
نویسندگان
Anna Szerling, Kamil Kosiel, Anna Wójcik-JedliÅska, Mariusz PÅuska, Maciej Bugajski,