Defects in Ge-doped Cz-Si annealed under high stress

The effect of stress induced by enhanced hydrostatic pressure (HP, up to 1.1 GPa) at annealing up to 1400 K of Ge-doped Czochralski silicon (Cz-Si:Ge) on a creation of thermal donors (TDs) and of oxygen-related defects is investigated by spectroscopic (FTIR) photoluminescence and electrical methods. While the presence of Ge results in reduced generation of TDs in Cz-Si:Ge annealed at 723 K under 105 Pa, HP applied at 698-748 K produces TDs in a much enhanced concentration. The treatments under 1.1 GPa at 1070-1270 K result in increasing, for up to 20%, precipitation of oxygen. An explanation of the HP effect on a creation of defects in Cz-Si:Ge is proposed.