Raman scattering study on vibrational modes in Ga1−xMnxN prepared by Mn-ion implantation

Raman scattering measurements have been carried out on ferromagnetic semiconductor Ga1−xMnxN prepared by Mn-ion implantation and post annealing. The Raman results obtained from the annealed and un-annealed Ga1−xMnxN demonstrate that crystalline quality has been improved in Ga1−xMnxN after annealing. Some new vibrational modes in addition to GaN-like modes are found in the Raman spectra measured from the Ga1−xMnxN where the GaN-like modes are found to be shifted in the higher frequency side than those measured from the bulk GaN. A new vibrational mode observed is assigned to MnN-like mode. Other new phonon modes observed are assigned to disorder-activated modes and Mn-related vibrational modes caused by Mn-ion implantation and post-annealing.