Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping

Raman backscattering measurements were carried out on Si crystals heavily doped with B and/or Ge over the temperature range from 123 to 573 K. It was found that the frequency of the q≈0 optical phonon in the Si crystals decreased almost linearly with increasing temperature, and the temperature coefficient depended on the B concentration. On the other hand, the change in frequency with temperature was relatively insensitive to Ge doping in comparison with B doping. However, heavy B and Ge codoping in Si resulted in a relatively larger temperature coefficient than B doping with the same B concentration.