Effect of pressure annealing on structure of Si:Mn

The effect of uniform stress induced by enhanced hydrostatic pressure (HP, up to 1.1 GPa) at processing (at treatment temperature HT up to 1400 K) of Czochralski silicon (CzSi:Mn) and floating zone silicon (FzSi:Mn), implanted with Mn+ at 160 keV to a dose 1×1016 cm−2 at substrate temperature Ts⩽340 K (CzSi:Mn) or Ts=610 K (FzSi:Mn), on their structure, creation of thermal donors and on magnetic properties has been investigated by secondary ion mass spectrometry, X-ray, photoluminescence, electrical and magnetic methods. By varying Ts, HT and HP one can produce samples of different structure and magnetic ordering. Contrary to the case of FzSi:Mn, the Mn profile in processed CzSi:Mn is shifted towards the sample surface; enhanced HP results in partial magnetic ordering. The reason for HP effect on the defect structure and magnetic properties of Si:Mn has been discussed.