Boundaries of 7×7 reconstruction domains on Si(1 1 1)

The relation of the phase shifts between the 7×7 domains surrounding a triangular defect region has been revealed by introducing a phase-shift vector on the Si(1 1 1) reconstructed surface. I–V measurement is of great benefit to the investigation on the local electronic properties. To get further information about the influence of the experimental conditions, different thermal annealing treatments on the Si(1 1 1) surface have been carried out. In situ STM data show that the density of the reconstruction domains varies with the quenching current and cooling rate.