کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729105 1461439 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons
چکیده انگلیسی

The degradation of 2-MeV electron-irradiated C-doped SiGe diodes was investigated. After electron irradiation, the reverse current increases with increasing electron fluence, while the capacitance decreases. At the highest fluence studied (1×1016 e/cm2), a different behaviour of the reverse current with junction area was observed. DLT spectra show that a broad peak is observed for p+/n and n+/p diodes after 1×1015 e/cm2 electron irradiation. The degradation of the diodes is mainly attributed to the radiation-induced defects in SiGe layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 1–3, February–June 2006, Pages 292–295
نویسندگان
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