High-resolution photoinduced transient spectroscopy of defect centres in semi-insulating InP obtained by iron diffusion

High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to study electronic properties of point defects in semi-insulating (SI) InP obtained by iron diffusion during the high-temperature annealing in iron-phosphide (IP) ambience. A two-dimensional approach to the spectral analysis of the photocurrent decays recorded in a wide range of temperatures and a neural network method to extracting the parameters of defect centres are used. The defect structure of SI InP wafers annealed under the IP and pure phosphorus atmospheres is compared.