Role of deep traps in carrier generation and transport in differently doped InP wafers

We report on investigations of nonequilibrium carrier generation, recombination and transport in differently doped InP crystals by means of time resolved degenerative four-wave mixing technique. The role of deep traps in carrier diffusion and lifetime was monitored through a feedback effect of a space-charged field to carrier transport and provided a photoconductivity type of differently doped InP crystals. Fast transients were used to evaluate the concentration of residual defects in the crystals.