کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729167 | 892875 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies on non-thermal atmospheric pressure plasma process conditions for groove formation on silicon nitride for silicon solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Fabrications of narrow electrode grooves for front electrodes on single crystalline silicon solar cells were examined using surface discharges, in which the electrode grooves were formed by etching a silicon nitride (SiN) film on substrates. The surface discharge could effectively etch the SiN film within 10Â s and that a high etching rate more than 1800Â nm/min was obtained. An optimum ratio of Ar gas, which was enough to maintain the formation of innumerable surface streamers, was 2.3 times larger than that of etching gas, and a short-term etching with the high discharge voltage was effective to narrow groove width.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 12, Issue 3, June 2009, Pages 106-112
Journal: Materials Science in Semiconductor Processing - Volume 12, Issue 3, June 2009, Pages 106-112
نویسندگان
Toshiyuki Hamada, Tatsuya Sakoda, Masahisa Otsubo,