کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729168 | 892875 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Identification of SiC polytypes by etched Si-face morphology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The relationship between polytypes and etched Si face morphology of SiC was investigated in this paper. The defect-selective wet-etch technique was used to give an anisotropic etching of SiC. The regular but different shape etching pits were observed on the Si face. Raman spectra were applied to verify the polytypes information of the regions with different etching pits. The experimental results show that the green SiC crystal with perfect hexagonal etching pits is 6H-SiC along the (0 0 0 1) direction and the pistachio region with three long-edges and three short-edges hexagon etching pits belong to 15R-SiC along the (0 0 0 1) direction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 12, Issue 3, June 2009, Pages 113–117
Journal: Materials Science in Semiconductor Processing - Volume 12, Issue 3, June 2009, Pages 113–117
نویسندگان
Ying Yang, Zhiming Chen,