کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729268 | 892880 | 2008 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A Monté Carlo simulation study of high-dose and low-energy boron implantation into LPCVD-NiDoS polycrystalline thin films
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A Monté Carlo simulation study of high-dose and low-energy boron implantation into LPCVD-NiDoS polycrystalline thin films A Monté Carlo simulation study of high-dose and low-energy boron implantation into LPCVD-NiDoS polycrystalline thin films](/preview/png/729268.png)
چکیده انگلیسی
As previously found, the presence of nitrogen in the target is known to reduce boron penetration in the polycrystalline silicon films. This effect is significantly increased at high nitrogen concentrations. On the contrary, the characteristic fine-grained structure of these films, which corresponds to the presence of grains (G) and grain boundaries (GB), is known to enhance the opposite phenomenon. This last behavior is taken into consideration by assuming that the grain boundary plays an effective role in the scattering calculation process of the incident ions. In our analysis we postulate that: the incident ion, after interaction with GB, should only produce a change in direction and not a loss of its energy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 11, Issue 3, June 2008, Pages 71-80
Journal: Materials Science in Semiconductor Processing - Volume 11, Issue 3, June 2008, Pages 71-80
نویسندگان
S. Merabet, M. Boukezzata, P. Temple-Boyer, E. Scheid,