کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729281 | 1461417 | 2015 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer](/preview/png/729281.png)
In this study, a trapezoidal-shaped electron blocking layer is proposed to improve efficiency droop of InGaN/GaN multiple quantum well light-emitting diodes. The energy band diagram, carrier distribution profile, electrostatic field, and electron current leakage are systematically investigated between two light-emitting diodes with different electron blocking layer structures. The simulation results show that, when traditional AlGaN electron blocking layer is replaced by trapezoidal-shaped electron blocking layer, the electron current leakage is dramatically reduced and the hole injection efficiency in markedly enhanced due to the better polarization match, the quantum-confined Stark effect is mitigated and the radiative recombination rate is increased in the active region subsequently, which are responsible for the alleviation of efficiency droop. The optical performance of light-emitting diodes with trapezoidal-shaped electron blocking layer is significantly improved when compared with its counterpart with traditional AlGaN electron blocking layer.
Journal: Materials Science in Semiconductor Processing - Volume 29, January 2015, Pages 95–101