Novel InGaN mesoporous grown by PA-MBE

This study involves the synthesis of Porous InxGa1−xN/GaN/AlN on Si (111) subatrate using an electrochemical etching technique based on plasma-assisted molecular beam epitaxy.The structural and optical properties of the as-grown and porous films were subsequently investigated. The X-ray diffraction measurements showed that the InxGa1-xN/GaN/AlN was epitaxially grown on Si substrate. Using the Vegard's law, a high (0.30) In-mole fraction was obtained. The Scanning electron microscopy images revealed that the synthesis process enhanced the surface morphology of the Si (111) subatrate. Micro-photoluminescence spectra displayed sharp and intense peaks at 364 nm with relatively low yellow emission band, indicating good optical quality.