کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729322 | 1461417 | 2015 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy](/preview/png/729322.png)
Highly doped p-type ZnTe films grown on GaAs (001) were fabricated by molecular beam epitaxy (MBE) using a radio frequency (RF) plasma nitrogen cell, and were characterized by the reflection high-energy electron diffraction, X-ray diffraction, Hall, Raman and atomic force microscope analysis. We have found that under the optimized undoped growth conditions, it was easy to obtain high-quality single crystalline undoped ZnTe films on GaAs (001) substrate. However, when adding an RF plasma nitrogen cell to doping and applying the similar growth conditions, there was a dramatic impact on the crystalline quality of ZnTe:N films, i.e. instead of high-quality single crystalline films, only highly doped p-type polycrystalline ZnTe:N films with doping levels of more than 1×1020 cm−3 were obtained. In addition, there existed the evidence of the second phase of Te clusters in the polycrystalline ZnTe:N films for the first time, and through the rapid-thermal-annealing (RTA) treatment at the temperature above 400 °C for 5 min, the Te clusters would disappear and the crystalline quality would be improved significantly. The possible origin of this phenomenon was also discussed.
Journal: Materials Science in Semiconductor Processing - Volume 29, January 2015, Pages 351–356