کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729370 1461422 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Resolution properties of reflection-mode exponential-doping GaAs photocathodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Resolution properties of reflection-mode exponential-doping GaAs photocathodes
چکیده انگلیسی

Resolution properties of reflection-mode exponential-doping and uniform-doping GaAs photocathodes were calculated and comparatively analyzed by using the modulation transfer function obtained by establishing and solving the two-dimensional continuity equation. The calculated results show that compared with the uniform-doping GaAs photocathode, the exponential-doping structure can improve significantly not only the resolution, but also the quantum efficiency of the photocathode. This improvement differs from the approach for achieving high resolution by reducing the emitting layer thickness TeTe and the electron diffusion length LDLD or by increasing the recombination velocity of back-interface SVSV, which results in low quantum efficiency. Furthermore, the improvement of resolution and quantum efficiency of the reflection-mode exponential-doping GaAs photocathode is due the effect of the built-in electric field on electron transport and on lateral diffusion.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 24, August 2014, Pages 215–219
نویسندگان
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