کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729393 892890 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Relaxation of defects in amorphous barium titanate thin films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Relaxation of defects in amorphous barium titanate thin films
چکیده انگلیسی
Relaxation of electrical defects in amorphous barium titanate thin films was studied by the thermally stimulated current (TSC) technique. We were able to detect at least three relaxation peaks in the TSC spectra. One is associated with activation energy of 0.65 eV and is possibly related to electronic trap levels below the conduction band. Another one is associated with activation energy close to 1 eV corresponding to the migration of positively charged oxygen vacancies within the films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issue 6, December 2006, Pages 918-922
نویسندگان
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