کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729394 892890 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of electrically active defects in amorphous barium titanate thin films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Investigation of electrically active defects in amorphous barium titanate thin films
چکیده انگلیسی

DC and AC electrical properties of amorphous barium titanate thin film capacitors have been investigated as a function of temperature. A clear correlation is found between the temperature dependence of DC leakage currents and the temperature variation of the AC loss peaks, showing that these measurement techniques are probing the same electrical defects. Using either of these two techniques in amorphous barium titanate, we were able to detect oxygen vacancies diffusion with activation energy around 1 eV, and electron traps at 0.3 and 0.4 eV.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issue 6, December 2006, Pages 923–927
نویسندگان
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