کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
729409 892890 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of ALD-deposited Al oxide films for high-k purposes: A chemical investigation
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Characterization of ALD-deposited Al oxide films for high-k purposes: A chemical investigation
چکیده انگلیسی

ALD aluminum oxides from H2O and Al(CH3)3 precursors have been deposited in the pilot line at ST Microelectronics Agrate, as a high-k inter-poly dielectric. The deposition has been followed by some conditioning steps dedicated to the investigation of the chemical film stability. ToF–SIMS, AES and XPS have been used in order to perform this study. ToF–SIMS analyses revealed that, after a N2 RTP, hydrogen becomes strongly reduced in the film and silicon migrates from the substrate to the surface; moreover an AlN signal is detected across the film as a result of NH3 annealing and/or of N2 RTP. The chemical affinity of the film towards nitrogen incorporation is proven also by AES and XPS, the latter showing the presence of AlN at the surface in case of N2 RTP. Finally Si is found at the surface of the RTP treated samples even at the AES and XPS sensitivity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issue 6, December 2006, Pages 1000–1005
نویسندگان
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