Crystal growth of AlN: Effect of SiC substrate

The morphology of AlN crystal grown under the same growth conditions by the PVT method on four kinds of 4H-SiC substrates (SiC (0001), SiC (000−1), 8° off-axis SiC (0001), and 8° off-axis SiC (000−1), off-oriented from the basal plane toward the 〈11–20〉 direction) was investigated. It is found that the nucleation more easily occurs on the Si face substrate than on the C face substrate at 1800–1900 °C. Hexagonal flakes nucleated on the SiC (0001) substrate, while tetrahedral grains nucleated on the 8° off-axis SiC (0001) substrate. AlN grown on the 8° off-axis SiC (000−1) substrate was strikingly different, and flower pattern structure AlN deposited on the substrate. A stepped structure with smooth terraces was obtained on the 8° off-axis SiC (0001) substrate at 1900 °C for 4 h. We conclude that the AlN grown on the 8° off-axis SiC (0001) substrate was first by island nucleation then by the step-flow growth mode.