کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
729536 | 892911 | 2012 | 9 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Influence of substrate on the growth of microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition Influence of substrate on the growth of microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition](/preview/png/729536.png)
Microcrystalline silicon (μc-Si) thin films are widely used for silicon thin film solar cells, especially in the high performance tandem solar cells which comprise an amorphous silicon junction at the top and a μc-Si junction at the bottom. One of the major factors affecting the photovoltaic properties of μc-Si thin film solar cells of thin films is the quality of the μc-Si thin films. In this work, we investigated the effect of substrates on the crystallization characteristics and growth behaviors of μc-Si thin films grown by the plasma enhanced chemical vapor deposition method (PECVD), and found that substrates have a strong effect on the crystallization characteristics of μc-Si thin films. In addition, the growth rate of μc-Si thin films was also highly influenced by the substrates. Three types of substrates, quartz glass, single crystalline silicon and thermally oxidized single crystalline silicon, were used for growing μc-Si thin films from SiH4/H2 with a flow rate ratio 2:98 at different temperatures. Crystallization characteristics of these μc-Si thin films were studied by Raman scattering and X-ray diffraction techniques.
Journal: Materials Science in Semiconductor Processing - Volume 15, Issue 4, August 2012, Pages 412–420