Metal implants-dependent carrier recombination characteristics in Ge

The impact of metallic impurities on the carrier lifetime in Ge is studied by using microwave probed photo-conductivity relaxation and photo-conductivity quenching spectroscopy techniques. Carrier decay transients are examined using a wide range of excitation regimes. Spectrally resolved and spectrum-integrated photo-quenching characteristics are examined to reveal the involved carriers and competing recombination centres.