Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach

The ultra-low leakage properties of a novel InGaAs/InAlAs/InP structure have been used to fabricate large gate periphery pHEMTs (up to 1200 μm2) required for wide band low-noise amplifiers (LNA). The devices were characterized and both linear and non-linear models were extracted. LNAs were then designed and compared favourably with the best results reported to date between 0.3 and 2 GHz, still using a 1 μm gate length optical lithography.